onsemi-2N4919G - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N4919G	2N4918G	2N4919
Manufacturer	onsemi	onsemi	Solid State Inc.
Product Status	Active	Active	Active
Transistor Type	PNP	PNP	PNP
Current - Collector (Ic) (Max)	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	60 V	40 V	60 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A	600mV @ 100mA, 1A	600mV @ 100mA, 1A
Current - Collector Cutoff (Max)	500µA	500µA	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 500mA, 1V	30 @ 500mA, 1V	40 @ 50mA, 1V
Power - Max	30 W	30 W	30 W
Frequency - Transition	3MHz	3MHz	3MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3	TO-225AA, TO-126-3
Supplier Device Package	TO-126	TO-126	TO-126

onsemi 2N4919G

Transistor Type:	PNP
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 100mA, 1A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 500mA, 1V
Power - Max:	30 W
Frequency - Transition:	3MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126