onsemi-2N4401_S00Z - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N4401_S00Z	2N4403_S00Z	2N4402_S00Z	2N4400_S00Z
Manufacturer	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	PNP	PNP	NPN
Current - Collector (Ic) (Max)	600 mA	600 mA	600 mA	600 mA
Voltage - Collector Emitter Breakdown (Max)	40 V	40 V	40 V	40 V
Vce Saturation (Max) @ Ib, Ic	750mV @ 50mA, 500mA	750mV @ 50mA, 500mA	750mV @ 50mA, 500mA	750mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	-	-	-	-
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 1V	100 @ 150mA, 2V	50 @ 150mA, 2V	50 @ 150mA, 1V
Power - Max	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	250MHz	200MHz	-	-
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3

Transistor Type:	NPN
Current - Collector (Ic) (Max):	600 mA
Voltage - Collector Emitter Breakdown (Max):	40 V
Vce Saturation (Max) @ Ib, Ic:	750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 1V
Power - Max:	625 mW
Frequency - Transition:	250MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3

onsemi 2N4401_S00Z