onsemi-2N3906TAR - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N3906TAR	2N3906TFR	2N3904TAR	2N3905TAR	2N3906TA
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Active	Active	Obsolete	Active
Transistor Type	PNP	PNP	NPN	PNP	PNP
Current - Collector (Ic) (Max)	200 mA	200 mA	200 mA	200 mA	200 mA
Voltage - Collector Emitter Breakdown (Max)	40 V	40 V	40 V	40 V	40 V
Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 50mA	400mV @ 5mA, 50mA	300mV @ 5mA, 50mA	400mV @ 5mA, 50mA	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	-	-	-	-	-
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V	100 @ 10mA, 1V	100 @ 10mA, 1V	50 @ 10mA, 1V	100 @ 10mA, 1V
Power - Max	625 mW	625 mW	625 mW	625 mW	625 mW
Frequency - Transition	250MHz	250MHz	300MHz	-	250MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3

Transistor Type:	PNP
Current - Collector (Ic) (Max):	200 mA
Voltage - Collector Emitter Breakdown (Max):	40 V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	625 mW
Frequency - Transition:	250MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3

onsemi 2N3906TAR