onsemi-2N3906_D81Z - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N3906_D81Z	2N3904_D81Z	2N3906_D11Z
Manufacturer	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete
Transistor Type	PNP	NPN	PNP
Current - Collector (Ic) (Max)	200 mA	200 mA	200 mA
Voltage - Collector Emitter Breakdown (Max)	40 V	40 V	40 V
Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 50mA	300mV @ 5mA, 50mA	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	-	-	-
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V	100 @ 10mA, 1V	100 @ 10mA, 1V
Power - Max	625 mW	625 mW	625 mW
Frequency - Transition	250MHz	300MHz	250MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3

Transistor Type:	PNP
Current - Collector (Ic) (Max):	200 mA
Voltage - Collector Emitter Breakdown (Max):	40 V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 1V
Power - Max:	625 mW
Frequency - Transition:	250MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92-3

onsemi 2N3906_D81Z