2N3416_D27Z
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onsemi 2N3416_D27Z

Manufacturer No:
2N3416_D27Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
2N3416_D27Z Datasheet
ECAD Model:
-
Description:
TRANS NPN 50V 0.5A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 3mA, 50mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:75 @ 2mA, 4.5V
Power - Max:625 mW
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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Similar Products

Part Number 2N3416_D27Z 2N3416_D29Z   2N3417_D27Z   2N3415_D27Z   2N3416_D26Z  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 25 V 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 3mA, 50mA 300mV @ 3mA, 50mA 300mV @ 3mA, 50mA 300mV @ 3mA, 50mA 300mV @ 3mA, 50mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 2mA, 4.5V 75 @ 2mA, 4.5V 180 @ 2mA, 4.5V 180 @ 2mA, 4.5V 75 @ 2mA, 4.5V
Power - Max 625 mW 625 mW 625 mW 625 mW 625 mW
Frequency - Transition - - - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3

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