onsemi-2N3055AG - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N3055AG	2N3055G	2N3055HG
Manufacturer	onsemi	onsemi	onsemi
Product Status	Active	Active	Obsolete
Transistor Type	NPN	NPN	NPN
Current - Collector (Ic) (Max)	15 A	15 A	15 A
Voltage - Collector Emitter Breakdown (Max)	60 V	60 V	60 V
Vce Saturation (Max) @ Ib, Ic	5V @ 7A, 15A	3V @ 3.3A, 10A	3V @ 3.3A, 10A
Current - Collector Cutoff (Max)	700µA	700µA	700µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 4A, 2V	20 @ 4A, 4V	20 @ 4A, 4V
Power - Max	115 W	115 W	115 W
Frequency - Transition	6MHz	2.5MHz	2.5MHz
Operating Temperature	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-204AA, TO-3	TO-204AA, TO-3	TO-204AA, TO-3
Supplier Device Package	TO-204 (TO-3)	TO-204 (TO-3)	TO-204 (TO-3)

onsemi 2N3055AG

Transistor Type:	NPN
Current - Collector (Ic) (Max):	15 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	5V @ 7A, 15A
Current - Collector Cutoff (Max):	700µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 4A, 2V
Power - Max:	115 W
Frequency - Transition:	6MHz
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-204AA, TO-3
Supplier Device Package:	TO-204 (TO-3)