1N914B_T50R
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onsemi 1N914B_T50R

Manufacturer No:
1N914B_T50R
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
1N914B_T50R Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 100V 200MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:175°C (Max)
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Similar Products

Part Number 1N914B_T50R 1N914_T50R   1N916B_T50R   1N914A_T50R   1N914B_T50A  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V 100 V
Current - Average Rectified (Io) 200mA 200mA 200mA 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1 V @ 10 mA 1 V @ 20 mA 1 V @ 20 mA 1 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 5 µA @ 75 V 5 µA @ 75 V 5 µA @ 75 V 5 µA @ 75 V 5 µA @ 75 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package DO-35 DO-35 DO-35 DO-35 DO-35
Operating Temperature - Junction 175°C (Max) 150°C (Max) -55°C ~ 175°C 175°C (Max) 175°C (Max)

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