1N5821G
  • Share:

onsemi 1N5821G

Manufacturer No:
1N5821G
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
1N5821G Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 30V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:2 mA @ 30 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AA, DO-27, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 125°C
0 Remaining View Similar

In Stock

$0.19
3,883

Please send RFQ , we will respond immediately.

Similar Products

Part Number 1N5821G 1N5822G   1N5821H   1N5820G   1N5821  
Manufacturer onsemi onsemi Taiwan Semiconductor Corporation onsemi Fairchild Semiconductor
Product Status Obsolete Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 40 V 30 V 20 V 30 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 3 A 525 mV @ 3 A 500 mV @ 3 A 475 mV @ 3 A 900 mV @ 9.4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 2 mA @ 30 V 2 mA @ 40 V 500 µA @ 30 V 2 mA @ 20 V 2 mA @ 30 V
Capacitance @ Vr, F - - 200pF @ 4V, 1MHz - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial DO-201AD, Axial DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial
Supplier Device Package Axial Axial DO-201AD Axial DO-201
Operating Temperature - Junction -65°C ~ 125°C -65°C ~ 125°C -55°C ~ 125°C -65°C ~ 125°C -50°C ~ 150°C

Related Product By Categories

CDBC5100-G
CDBC5100-G
Comchip Technology
DIODE SCHOTTKY 100V 5A DO214AB
UF4007-E3/54
UF4007-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
ES3B
ES3B
onsemi
DIODE GEN PURP 100V 3A SMC
B0540WSHE3-TP
B0540WSHE3-TP
Micro Commercial Co
DIODE SCHOTTKY 40V 500MA SOD323
CDBA1150-HF
CDBA1150-HF
Comchip Technology
DIODE SCHOTTKY 150V 1A DO214AC
HER208G
HER208G
Taiwan Semiconductor Corporation
DIODE GEN PURP 2A DO204AC
UG4B-M3/54
UG4B-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 4A DO201AD
ES2AAHR3G
ES2AAHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO214AC
HER603G
HER603G
Taiwan Semiconductor Corporation
DIODE GEN PURP 6A 200V R-6
SBLF10L25-E3/45
SBLF10L25-E3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 25V 10A ITO220AC
RGP10BE-M3/73
RGP10BE-M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
ES1DL RTG
ES1DL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA

Related Product By Brand

NCP1030GEVB
NCP1030GEVB
onsemi
EVAL BOARD FOR NCP1030
RURG30120
RURG30120
onsemi
DIODE GEN PURP 1.2KV 30A TO247
MMSZ10T3
MMSZ10T3
onsemi
DIODE ZENER 10V 500MW SOD123
SS8050CBU
SS8050CBU
onsemi
TRANS NPN 25V 1.5A TO92-3
NSBC114EDXV6
NSBC114EDXV6
onsemi
TRANS 2NPN PREBIAS 0.5W SOT563
NTLJD2104PTBG
NTLJD2104PTBG
onsemi
MOSFET 2P-CH 12V 2.4A 6WDFN
MGSF1N02LT1G
MGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
NVMFS5833NT1G
NVMFS5833NT1G
onsemi
MOSFET N-CH 40V 16A 5DFN
MC100H641FNG
MC100H641FNG
onsemi
IC CLK BUFFER 1:9 65MHZ 28PLCC
MC10H210MG
MC10H210MG
onsemi
IC GATE OR 2CH 3-INP 16SOEIAJ
UC2844BD1R2G
UC2844BD1R2G
onsemi
IC REG CTRLR PWM CM 8-SOIC
TIL1133SD
TIL1133SD
onsemi
OPTOISO 5.3KV DARL W/BASE 6SMD