1N5821G
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onsemi 1N5821G

Manufacturer No:
1N5821G
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
1N5821G Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 30V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:2 mA @ 30 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AA, DO-27, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 125°C
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Similar Products

Part Number 1N5821G 1N5822G   1N5821H   1N5820G   1N5821  
Manufacturer onsemi onsemi Taiwan Semiconductor Corporation onsemi Fairchild Semiconductor
Product Status Obsolete Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 40 V 30 V 20 V 30 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 3 A 525 mV @ 3 A 500 mV @ 3 A 475 mV @ 3 A 900 mV @ 9.4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 2 mA @ 30 V 2 mA @ 40 V 500 µA @ 30 V 2 mA @ 20 V 2 mA @ 30 V
Capacitance @ Vr, F - - 200pF @ 4V, 1MHz - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial DO-201AD, Axial DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial
Supplier Device Package Axial Axial DO-201AD Axial DO-201
Operating Temperature - Junction -65°C ~ 125°C -65°C ~ 125°C -55°C ~ 125°C -65°C ~ 125°C -50°C ~ 150°C

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