1N4448TR
  • Share:

onsemi 1N4448TR

Manufacturer No:
1N4448TR
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
1N4448TR Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 100V 200MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.11
1,151

Please send RFQ , we will respond immediately.

Similar Products

Part Number 1N4448TR 1N4446TR   1N4447TR   1N4448 TR   1N4448/TR  
Manufacturer onsemi onsemi Fairchild Semiconductor Central Semiconductor Corp Microchip Technology
Product Status Active Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V 75 V
Current - Average Rectified (Io) 200mA 200mA - 150mA 200mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1 V @ 20 mA - 720 mV @ 5 mA 1 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Standard Recovery >500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns - 4 ns 4 ns
Current - Reverse Leakage @ Vr 5 µA @ 75 V 25 nA @ 20 V - 25 nA @ 20 V 25 nA @ 20 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 4pF @ 0V, 1MHz - 4pF @ 0V, 1MHz -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package DO-35 DO-35 DO-35 (DO-204AH) DO-35 DO-35
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) -65°C ~ 200°C -65°C ~ 150°C

Related Product By Categories

VS-ETH3006-M3
VS-ETH3006-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 30A TO220-2
SFF1606G
SFF1606G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 16A ITO220AB
R2000FG
R2000FG
Rectron USA
DIODE GEN PURP 2000V 500MA DO41
SSL12H
SSL12H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A DO214AC
SE20DDHM3/I
SE20DDHM3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3.9A TO263AC
S1PK-E3/84A
S1PK-E3/84A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO220AA
1N4004GPP TR
1N4004GPP TR
Central Semiconductor Corp
DIODE GEN PURP 400V 1A DO41
SS22SHE3_A/I
SS22SHE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20V 2A DO214AC
ES1DLHMQG
ES1DLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
SS15L RTG
SS15L RTG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 1A SUB SMA
FR303G A0G
FR303G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
UF5405-AP
UF5405-AP
Micro Commercial Co
DIODE GP 500V 3A DO201AD

Related Product By Brand

MMSZ5234BT1
MMSZ5234BT1
onsemi
DIODE ZENER 6.2V 500MW SOD-123
MMSZ5V6T1
MMSZ5V6T1
onsemi
DIODE ZENER 5.6V 500MW SOD-123
MMSZ4708T1
MMSZ4708T1
onsemi
DIODE ZENER 22V 500MW SOD123
BCW65CLT1G
BCW65CLT1G
onsemi
TRANS NPN 32V 0.8A SOT23-3
SNSS35200MR6T1G
SNSS35200MR6T1G
onsemi
TRANS PNP 35V 2A 6TSOP
BC848CWT1
BC848CWT1
onsemi
TRANSISTOR NPN 30V 100MA SOT-323
NCP2890DMR2
NCP2890DMR2
onsemi
IC AMP CLSS AB MONO 1.08W 8MICRO
NCS213RSQT2G
NCS213RSQT2G
onsemi
IC CURRENT SENSE 1 CIRCUIT SC88
FPF2004
FPF2004
onsemi
IC PWR SWITCH P-CHAN 1:1 SC70-5
NCP302LSN16T1
NCP302LSN16T1
onsemi
IC SUPERVISOR PWR SUP SUPPORT
CAT1163WI-30-G
CAT1163WI-30-G
onsemi
IC SUPERVISOR 1 CHANNEL 8SOIC
MC1723BD
MC1723BD
onsemi
IC REG LINEAR ADJ POS REGULATOR