1HN04CH-TL-W
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onsemi 1HN04CH-TL-W

Manufacturer No:
1HN04CH-TL-W
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
1HN04CH-TL-W Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 270MA 3CPH
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:8Ohm @ 140mA, 10V
Vgs(th) (Max) @ Id:2.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:0.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:15 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-CPH
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

$0.60
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Similar Products

Part Number 1HN04CH-TL-W 1HP04CH-TL-W  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 270mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 140mA, 10V 18Ohm @ 80mA, 10V
Vgs(th) (Max) @ Id 2.6V @ 100µA 2.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 0.9 nC @ 10 V 0.9 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 15 pF @ 20 V 14 pF @ 20 V
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 3-CPH 3-CPH
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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