NXP USA Inc.-SI9936DY,518 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	5A
Rds On (Max) @ Id, Vgs:	50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	-
Power - Max:	900mW
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

NXP USA Inc. SI9936DY,518