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| Part Number | SI4410DY,518 | SI4420DY,518 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tj) | 12.5A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 10A, 10V | 9mOhm @ 12.5A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 5 V | 120 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | - | - |
| FET Feature | - | - |
| Power Dissipation (Max) | 2.5W (Ta) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | 8-SO | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
