PSMN9R5-100XS,127
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NXP USA Inc. PSMN9R5-100XS,127

Manufacturer No:
PSMN9R5-100XS,127
Manufacturer:
NXP USA Inc.
Package:
Tube
Datasheet:
PSMN9R5-100XS,127 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 44.2A TO220F
Delivery:
Payment:
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iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:44.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:81.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4454 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):52.6W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack, Isolated Tab
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Similar Products

Part Number PSMN9R5-100XS,127 PSMN9R5-100PS,127  
Manufacturer NXP USA Inc. NXP Semiconductors
Product Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 100 V -
Current - Continuous Drain (Id) @ 25°C 44.2A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 9.6mOhm @ 10A, 10V -
Vgs(th) (Max) @ Id 4V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 81.5 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 4454 pF @ 50 V -
FET Feature - -
Power Dissipation (Max) 52.6W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package TO-220F -
Package / Case TO-220-3 Full Pack, Isolated Tab -

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