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| Part Number | PSMN8R5-108ES | PSMN8R5-108ESQ |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Product Status | Active | Obsolete |
| FET Type | - | N-Channel |
| Technology | - | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | - | 108 V |
| Current - Continuous Drain (Id) @ 25°C | - | 100A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | - | 10V |
| Rds On (Max) @ Id, Vgs | - | 8.5mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | - | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - | 111 nC @ 10 V |
| Vgs (Max) | - | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | - | 5512 pF @ 50 V |
| FET Feature | - | - |
| Power Dissipation (Max) | - | 263W (Tc) |
| Operating Temperature | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | Through Hole |
| Supplier Device Package | - | I2PAK |
| Package / Case | - | TO-262-3 Long Leads, I²Pak, TO-262AA |
