PSMN8R0-30YL,115
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NXP USA Inc. PSMN8R0-30YL,115

Manufacturer No:
PSMN8R0-30YL,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PSMN8R0-30YL,115 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 62A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:62A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:18.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1005 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):56W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Part Number PSMN8R0-30YL,115 PSMN8R0-30YLC115   PSMN9R0-30YL,115   PSMN8R0-30YLC,115   PSMN4R0-30YL,115   PSMN5R0-30YL,115   PSMN6R0-30YL,115   PSMN7R0-30YL,115  
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Active Obsolete Obsolete Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc) 54A (Tc) 61A (Tc) 54A (Tc) 100A (Tc) 91A (Tc) 79A (Tc) 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.3mOhm @ 15A, 10V 7.9mOhm @ 15A, 10V 8mOhm @ 15A, 10V 7.9mOhm @ 15A, 10V 4mOhm @ 15A, 10V 5mOhm @ 15A, 10V 6mOhm @ 15A, 10V 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA 1.95V @ 1mA 2.15V @ 1mA 1.95V @ 1mA 2.15V @ 1mA 2.15V @ 1mA 2.15V @ 1mA 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 18.3 nC @ 10 V 15 nC @ 10 V 17.8 nC @ 10 V 15 nC @ 10 V 36.6 nC @ 10 V 29 nC @ 10 V 24 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1005 pF @ 15 V 848 pF @ 15 V 1006 pF @ 12 V 848 pF @ 15 V 2090 pF @ 12 V 1760 pF @ 12 V 1425 pF @ 12 V 1270 pF @ 12 V
FET Feature - - - - - - - -
Power Dissipation (Max) 56W (Tc) 42W (Tc) 46W (Tc) 42W (Tc) 69W (Tc) 61W (Tc) 55W (Tc) 51W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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