NXP USA Inc.-PSMN7R6-60XSQ - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	51.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	7.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	4.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	38.7 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2651 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	46W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220F
Package / Case:	TO-220-3 Full Pack, Isolated Tab

NXP USA Inc. PSMN7R6-60XSQ