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| Part Number | PSMN5R6-100XS,127 | PSMN4R6-100XS,127 | PSMN5R0-100XS,127 | PSMN5R6-100PS,127 |
|---|---|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. | NXP USA Inc. | Nexperia USA Inc. |
| Product Status | Obsolete | Obsolete | Obsolete | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 61.8A (Tc) | 70.4A (Tc) | 67.5A (Tc) | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 15A, 10V | 4.6mOhm @ 15A, 10V | 5mOhm @ 15A, 10V | 5.6mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA | 4V @ 1mA | 4V @ 1mA | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V | 153 nC @ 10 V | 153 nC @ 10 V | 141 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8061 pF @ 50 V | 9900 pF @ 50 V | 9900 pF @ 50 V | 8061 pF @ 50 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 60W (Tc) | 63.8W (Tc) | 63.8W (Tc) | 306W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-220F | TO-220F | TO-220F | TO-220AB |
| Package / Case | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab | TO-220-3 |
