PSMN4R6-100XS,127
  • Share:

NXP USA Inc. PSMN4R6-100XS,127

Manufacturer No:
PSMN4R6-100XS,127
Manufacturer:
NXP USA Inc.
Package:
Tube
Datasheet:
PSMN4R6-100XS,127 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 70.4A TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:70.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:153 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9900 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):63.8W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack, Isolated Tab
0 Remaining View Similar

In Stock

$1.22
801

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN4R6-100XS,127 PSMN5R6-100XS,127  
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 70.4A (Tc) 61.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 15A, 10V 5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 153 nC @ 10 V 145 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9900 pF @ 50 V 8061 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 63.8W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220F TO-220F
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab

Related Product By Categories

SI2324A-TP
SI2324A-TP
Micro Commercial Co
MOSFET N-CH 100V 2A SOT23
SQS484ENW-T1_GE3
SQS484ENW-T1_GE3
Vishay Siliconix
MOSFET N-CH 40V 16A PPAK1212-8
RM2302
RM2302
Rectron USA
MOSFET N-CHANNEL 20V 4A SOT23
NVMYS010N04CLTWG
NVMYS010N04CLTWG
onsemi
MOSFET N-CH 40V 14A/38A 4LFPAK
IPI60R099CPAAKSA1
IPI60R099CPAAKSA1
Infineon Technologies
MOSFET N-CH 600V 31A TO262-3
IRFR13N20DTRL
IRFR13N20DTRL
Infineon Technologies
MOSFET N-CH 200V 13A DPAK
IXFK26N60Q
IXFK26N60Q
IXYS
MOSFET N-CH 600V 26A TO264AA
SI1472DH-T1-E3
SI1472DH-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 5.6A SC70-6
STD75N3LLH6
STD75N3LLH6
STMicroelectronics
MOSFET N-CH 30V 75A DPAK
IRF7467TRPBF
IRF7467TRPBF
Infineon Technologies
MOSFET N-CH 30V 11A 8SO
AUIRFR8401
AUIRFR8401
Infineon Technologies
MOSFET N-CH 40V 100A DPAK
RJP020N06T100
RJP020N06T100
Rohm Semiconductor
MOSFET N-CH 60V 2A MPT3

Related Product By Brand

PREV601M/01,699
PREV601M/01,699
NXP USA Inc.
EVAL BOARD FOR PR601
BZX84-C12/LF1VL
BZX84-C12/LF1VL
NXP USA Inc.
DIODE ZENER 12V 250MW TO236AB
MIMXRT1061CVL5B
MIMXRT1061CVL5B
NXP USA Inc.
IC MCU 32BIT 128KB ROM 196MAPBGA
MC9S08AC8CFGER
MC9S08AC8CFGER
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 44LQFP
S9S12GA192F0MLHR
S9S12GA192F0MLHR
NXP USA Inc.
IC MCU 16BIT 192KB FLASH 64LQFP
SPC5644CCF0MMJ1
SPC5644CCF0MMJ1
NXP USA Inc.
IC MCU 32B 1.5MB FLASH 256MAPBGA
74LVT273DB,118
74LVT273DB,118
NXP USA Inc.
IC FF D-TYPE SNGL 8BIT 20SSOP
PIP3208-A,127
PIP3208-A,127
NXP USA Inc.
IC PWR SWITCH N-CH 1:1 SOT263B
BZV85-C7V5133
BZV85-C7V5133
NXP USA Inc.
NOW NEXPERIA BZV85-C7V5 - ZENER
MC33696FCE
MC33696FCE
NXP USA Inc.
IC RF TXRX ISM<1GHZ 32VFQFN
NT2H1311F0DTLH
NT2H1311F0DTLH
NXP USA Inc.
IC RFID TRANSP 13.56MHZ HXSON4
MF1PLUS8011DA4/02
MF1PLUS8011DA4/02
NXP USA Inc.
IC RFID TRANSP 13.56MHZ PLLMC