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| Part Number | PSMN3R2-25YLC,115 | PSMN3R7-25YLC,115 | PSMN1R2-25YLC,115 | PSMN2R2-25YLC,115 |
|---|---|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. |
| Product Status | Obsolete | Obsolete | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V | 25 V | 25 V | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | 97A (Tc) | 100A (Tc) | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 25A, 10V | 3.9mOhm @ 20A, 10V | 1.3mOhm @ 25A, 10V | 2.4mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 1.95V @ 1mA | 1.95V @ 1mA | 1.95V @ 1mA | 1.95V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | 21.6 nC @ 10 V | 66 nC @ 10 V | 39 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1781 pF @ 12 V | 1585 pF @ 12 V | 4173 pF @ 12 V | 2542 pF @ 12 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 79W (Tc) | 64W (Tc) | 179W (Tc) | 106W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 | LFPAK56, Power-SO8 | LFPAK56, Power-SO8 | LFPAK56, Power-SO8 |
| Package / Case | SC-100, SOT-669 | SC-100, SOT-669 | SC-100, SOT-669 | SC-100, SOT-669 |
