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| Part Number | PSMN2R6-60PSQ127 | PSMN2R6-60PS127 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Product Status | Active | Active |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | 60 V | - |
| Current - Continuous Drain (Id) @ 25°C | 150A (Ta) | - |
| Drive Voltage (Max Rds On, Min Rds On) | - | - |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 25A, 10V | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA | - |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V | - |
| Vgs (Max) | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 7629 pF @ 25 V | - |
| FET Feature | - | - |
| Power Dissipation (Max) | 326W (Ta) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) | - |
| Mounting Type | Through Hole | - |
| Supplier Device Package | TO-220AB | - |
| Package / Case | TO-220-3 | - |
