PSMN011-30YL,115
  • Share:

NXP USA Inc. PSMN011-30YL,115

Manufacturer No:
PSMN011-30YL,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PSMN011-30YL,115 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 51A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:51A (Tj)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:14.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:726 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):49W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

-
501

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN011-30YL,115 PSMN011-30YLC,115  
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 51A (Tj) 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.7mOhm @ 15A, 10V 11.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA 1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 14.8 nC @ 10 V 10.3 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 726 pF @ 15 V 641 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 49W (Tc) 29W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

Related Product By Categories

H5N5011PL-E
H5N5011PL-E
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
SSM6J402TU,LF
SSM6J402TU,LF
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 2A UF6
PSMN012-60YS,115
PSMN012-60YS,115
Nexperia USA Inc.
MOSFET N-CH 60V 59A LFPAK56
RM78N100LD
RM78N100LD
Rectron USA
MOSFET N-CH 100V 78A TO252-2
IPB019N08N5ATMA1
IPB019N08N5ATMA1
Infineon Technologies
DIFFERENTIATED MOSFETS
IXTT110N10P
IXTT110N10P
IXYS
MOSFET N-CH 100V 110A TO268
STT3PF20V
STT3PF20V
STMicroelectronics
MOSFET P-CH 20V 2.2A SOT23-6
IPI65R099C6XKSA1
IPI65R099C6XKSA1
Infineon Technologies
MOSFET N-CH 650V 38A TO262-3
IRFHM8228TRPBF
IRFHM8228TRPBF
Infineon Technologies
MOSFET N-CH 25V 19A 8PQFN
FDD9511L-F085
FDD9511L-F085
onsemi
MOSFET P-CH 40V 25A DPAK
RRH140P03TB1
RRH140P03TB1
Rohm Semiconductor
MOSFET P-CH 30V 14A 8SOP
RF4C050APTR
RF4C050APTR
Rohm Semiconductor
MOSFET P-CH 20V 10A HUML2020L8

Related Product By Brand

DEMO9S08JM16
DEMO9S08JM16
NXP USA Inc.
MC9S08JM16 EVAL BRD
BAT54A/DG/B4215
BAT54A/DG/B4215
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BZX84-C5V6/LF1VL
BZX84-C5V6/LF1VL
NXP USA Inc.
DIODE ZENER 5.6V 250MW TO236AB
PDTA144VK,115
PDTA144VK,115
NXP USA Inc.
TRANS PREBIAS PNP 250MW SMT3
PCK210BD,157
PCK210BD,157
NXP USA Inc.
IC CLK BUFFER 1:5 1.5GHZ 32LQFP
MC908GR16ACFAER
MC908GR16ACFAER
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 48LQFP
MCHLC908QT1PE
MCHLC908QT1PE
NXP USA Inc.
IC MCU 8BIT 1.5KB FLASH 8DIP
KMPC8347ZUAGDB
KMPC8347ZUAGDB
NXP USA Inc.
IC MPU MPC83XX 400MHZ 672TBGA
SC28L201A1DGG,118
SC28L201A1DGG,118
NXP USA Inc.
IC UART W/FIFO 48-TSSOP
74HCT10D-Q100118
74HCT10D-Q100118
NXP USA Inc.
IC GATE NAND 3CH 3-INP 14SO
BUK7618-55/C,118
BUK7618-55/C,118
NXP USA Inc.
N-CHANNEL TRENCHMOS LOGIC LEVEL
PN5120A0HN/C2,551
PN5120A0HN/C2,551
NXP USA Inc.
IC RFID RDR/TRAN 13.56MZ 40HVQFN