NXP USA Inc.-PSMN010-55D,118 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	55 V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	10.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	55 nC @ 5 V
Vgs (Max):	±15V
Input Capacitance (Ciss) (Max) @ Vds:	3300 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	125W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DPAK
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

NXP USA Inc. PSMN010-55D,118