NXP USA Inc.-PMZB420UN,315 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	490mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	0.98 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	65 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	360mW (Ta), 2.7W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DFN1006B-3
Package / Case:	SC-101, SOT-883

NXP USA Inc. PMZB420UN,315