PMZB290UNE,315
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NXP USA Inc. PMZB290UNE,315

Manufacturer No:
PMZB290UNE,315
Manufacturer:
NXP USA Inc.
Package:
Bulk
Datasheet:
PMZB290UNE,315 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 1A DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:83 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta), 2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:SC-101, SOT-883
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Similar Products

Part Number PMZB290UNE,315 PMZB290UN,315  
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta) 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 380mOhm @ 500mA, 4.5V 380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68 nC @ 4.5 V 0.68 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 83 pF @ 10 V 83 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc) 360mW (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN1006B-3 DFN1006B-3
Package / Case SC-101, SOT-883 3-XFDFN

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