NXP USA Inc.-PMWD30UN,518 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	5A
Rds On (Max) @ Id, Vgs:	33mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id:	700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:	1478pF @ 10V
Power - Max:	2.3W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP

NXP USA Inc. PMWD30UN,518