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PMWD30UN,518
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NXP USA Inc. PMWD30UN,518

Manufacturer No:
PMWD30UN,518
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMWD30UN,518 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 30V 5A 8TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:5A
Rds On (Max) @ Id, Vgs:33mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs:28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:1478pF @ 10V
Power - Max:2.3W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:8-TSSOP
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