NXP USA Inc.-PMWD20XN,118 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	10.4A
Rds On (Max) @ Id, Vgs:	22mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id:	1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	11.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	740pF @ 16V
Power - Max:	4.2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP

NXP USA Inc. PMWD20XN,118