PMWD15UN,518
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NXP USA Inc. PMWD15UN,518

Manufacturer No:
PMWD15UN,518
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMWD15UN,518 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 20V 11.6A 8TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:11.6A
Rds On (Max) @ Id, Vgs:18.5mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs:22.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1450pF @ 16V
Power - Max:4.2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:8-TSSOP
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Similar Products

Part Number PMWD15UN,518 PMWD16UN,518   PMWD19UN,518  
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V 30V
Current - Continuous Drain (Id) @ 25°C 11.6A 9.9A 5.6A
Rds On (Max) @ Id, Vgs 18.5mOhm @ 5A, 4.5V 19mOhm @ 3.5A, 4.5V 23mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 1mA 700mV @ 1mA 700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22.2nC @ 4.5V 23.6nC @ 4.5V 28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 16V 1366pF @ 16V 1478pF @ 10V
Power - Max 4.2W 3.1W 2.3W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP 8-TSSOP 8-TSSOP

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