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| Part Number | PMV65XPE215 | PMV65XPEA215 | PMV65XP,215 | PMV65XP1215 |
|---|---|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. | Nexperia USA Inc. | NXP USA Inc. |
| Product Status | Active | Active | Active | Active |
| FET Type | - | - | P-Channel | - |
| Technology | - | - | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | - | - | 20 V | - |
| Current - Continuous Drain (Id) @ 25°C | - | - | 2.8A (Ta) | - |
| Drive Voltage (Max Rds On, Min Rds On) | - | - | 1.8V, 4.5V | - |
| Rds On (Max) @ Id, Vgs | - | - | 74mOhm @ 2.8A, 4.5V | - |
| Vgs(th) (Max) @ Id | - | - | 900mV @ 250µA | - |
| Gate Charge (Qg) (Max) @ Vgs | - | - | 7.7 nC @ 4.5 V | - |
| Vgs (Max) | - | - | ±12V | - |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | 744 pF @ 20 V | - |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | - | - | 480mW (Ta) | - |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | - | Surface Mount | - |
| Supplier Device Package | - | - | TO-236AB | - |
| Package / Case | - | - | TO-236-3, SC-59, SOT-23-3 | - |
