NXP USA Inc.-PMV65UN,215 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	76mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	3.9 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	183 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	310mW (Ta), 2.17W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23 (TO-236AB)
Package / Case:	TO-236-3, SC-59, SOT-23-3

NXP USA Inc. PMV65UN,215