PMV45EN,215
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NXP USA Inc. PMV45EN,215

Manufacturer No:
PMV45EN,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMV45EN,215 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 5.4A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:42mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):280mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV45EN,215 PMV45EN2215  
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 30 V -
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 42mOhm @ 2A, 10V -
Vgs(th) (Max) @ Id 2V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 30 V -
FET Feature - -
Power Dissipation (Max) 280mW (Tj) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package SOT-23 (TO-236AB) -
Package / Case TO-236-3, SC-59, SOT-23-3 -

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