PMV30UN,215
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NXP USA Inc. PMV30UN,215

Manufacturer No:
PMV30UN,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMV30UN,215 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 5.7A TO236AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:36mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:7.4 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1.9W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV30UN,215 PMV40UN,215   PMV30XN,215  
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc) 4.9A (Tc) 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 36mOhm @ 2A, 4.5V 47mOhm @ 2A, 4.5V 35mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 1mA (Typ) 700mV @ 1mA (Typ) 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.4 nC @ 4.5 V 9.3 nC @ 4.5 V 7.4 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±12V
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 20 V 445 pF @ 30 V 420 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 1.9W (Tc) 1.9W (Tc) 380mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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