NXP USA Inc.-PMR670UPE,115 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	480mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	850mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id:	1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	1.14 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	87 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	250mW (Ta), 770mW (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SC-75
Package / Case:	SC-75, SOT-416

NXP USA Inc. PMR670UPE,115