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| Part Number | PMPB33XN,115 | PMPB33XP,115 |
|---|---|---|
| Manufacturer | NXP USA Inc. | Nexperia USA Inc. |
| Product Status | Active | Active |
| FET Type | N-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) | 5.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 4.3A, 4.5V | 37mOhm @ 5.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.6 nC @ 4.5 V | 23 nC @ 4.5 V |
| Vgs (Max) | ±12V | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 505 pF @ 15 V | 1575 pF @ 10 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 1.5W (Ta), 8.3W (Tc) | 1.7W (Ta), 12.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | DFN1010B-6 | DFN2020MD-6 |
| Package / Case | 6-XFDFN Exposed Pad | 6-UDFN Exposed Pad |
