PMPB23XNE,115
  • Share:

NXP USA Inc. PMPB23XNE,115

Manufacturer No:
PMPB23XNE,115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Datasheet:
PMPB23XNE,115 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 7A DFN2020MD-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:22mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1136 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.7W (Ta), 12.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1010B-6
Package / Case:6-XFDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.09
4,124

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMPB23XNE,115 PMPB29XNE,115   PMPB13XNE,115  
Manufacturer NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta) 5A (Ta) 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 22mOhm @ 7A, 4.5V 33mOhm @ 5A, 4.5V 16mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V 18.6 nC @ 4.5 V 36 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1136 pF @ 10 V 1150 pF @ 15 V 2195 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc) 1.7W (Ta), 12.5W (Tc) 1.7W (Ta), 12.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DFN1010B-6 DFN2020MD-6 DFN2020MD-6
Package / Case 6-XFDFN Exposed Pad 6-UDFN Exposed Pad 6-UDFN Exposed Pad

Related Product By Categories

RFP8P10
RFP8P10
Fairchild Semiconductor
P-CHANNEL POWER MOSFET
2N7002K-AU_R1_000A2
2N7002K-AU_R1_000A2
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
TPH1R405PL,L1Q
TPH1R405PL,L1Q
Toshiba Semiconductor and Storage
MOSFET N-CH 45V 120A 8SOP
STP45NF06
STP45NF06
STMicroelectronics
MOSFET N-CH 60V 38A TO220AB
SPP11N80C3XKSA1
SPP11N80C3XKSA1
Infineon Technologies
MOSFET N-CH 800V 11A TO220-3
IXFX240N25X3
IXFX240N25X3
IXYS
MOSFET N-CH 250V 240A PLUS247-3
DMP4025LSSQ-13
DMP4025LSSQ-13
Diodes Incorporated
MOSFET P-CH 40V 6A 8SO
2SK3003
2SK3003
Sanken
MOSFET N-CH 200V 18A TO220F
FCPF190N65FL1-F154
FCPF190N65FL1-F154
onsemi
MOSFET N-CH 650V 20.6A TO220F-3
PSMN3R5-80PS
PSMN3R5-80PS
NXP USA Inc.
NOW NEXPERIA PSMN3R5-80PS - POWE
ZXM64N03XTC
ZXM64N03XTC
Diodes Incorporated
MOSFET N-CH 30V 5A 8MSOP
PH2230DLSX
PH2230DLSX
Nexperia USA Inc.
MOSFET N-CH LFPAK5 POWER-SO8

Related Product By Brand

BZX79-B18,143
BZX79-B18,143
NXP USA Inc.
DIODE ZENER 18V 400MW ALF2
MRF8S9220HR3
MRF8S9220HR3
NXP USA Inc.
FET RF 70V 960MHZ NI780H
MRF8P20165WHSR3
MRF8P20165WHSR3
NXP USA Inc.
FET RF 2CH 65V 2.01GHZ NI780S4
PHD63NQ03LT,118
PHD63NQ03LT,118
NXP USA Inc.
MOSFET N-CH 30V 68.9A DPAK
MC56F8013VFAE
MC56F8013VFAE
NXP USA Inc.
IC MCU 16BIT 16KB FLASH 32LQFP
S912ZVCA19F0VLFR
S912ZVCA19F0VLFR
NXP USA Inc.
IC MCU 16BIT 192KB FLASH 48LQFP
S912ZVC19F0MKH
S912ZVC19F0MKH
NXP USA Inc.
IC MCU 16BIT 192KB FLASH 64LQFP
S912XEQ512J3MAGR
S912XEQ512J3MAGR
NXP USA Inc.
IC MCU 16BIT 512KB FLASH 144LQFP
74LVC3G17GD,125
74LVC3G17GD,125
NXP USA Inc.
FUNC, 1 INPUT, CMOS, PDSO8
74HC368N,652
74HC368N,652
NXP USA Inc.
IC BUFFER INVERT 6V 16DIP
BGU6005115
BGU6005115
NXP USA Inc.
LOW NOISE AMPLIFIER MMIC
QN9090HN/001Y
QN9090HN/001Y
NXP USA Inc.
QN9090 BLE SOC