NXP USA Inc.-PMN55LN,135 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	65mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	13.1 nC @ 10 V
Vgs (Max):	±15V
Input Capacitance (Ciss) (Max) @ Vds:	500 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	1.75W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SC-74
Package / Case:	SC-74, SOT-457

NXP USA Inc. PMN55LN,135