NXP USA Inc.-PMN27UP,115-NXP - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	32mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id:	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	31 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	2340 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	540mW (Ta), 6.25W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-TSOP
Package / Case:	SC-74, SOT-457

NXP USA Inc. PMN27UP,115-NXP