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PMGD8000LN,115
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NXP USA Inc. PMGD8000LN,115

Manufacturer No:
PMGD8000LN,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMGD8000LN,115 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 30V 0.125A 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:125mA
Rds On (Max) @ Id, Vgs:8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id:1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:18.5pF @ 5V
Power - Max:200mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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