NXP USA Inc.-PMGD8000LN,115 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	125mA
Rds On (Max) @ Id, Vgs:	8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id:	1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	18.5pF @ 5V
Power - Max:	200mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	6-TSSOP

NXP USA Inc. PMGD8000LN,115