NXP USA Inc.-PMG45UN,115 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	55mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	3.3 nC @ 4.5 V
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	184 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	375mW (Ta), 4.35W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-TSSOP
Package / Case:	6-TSSOP, SC-88, SOT-363

NXP USA Inc. PMG45UN,115