NXP USA Inc.-PMFPB6532UP,115 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	70mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	6 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	380 pF @ 10 V
FET Feature:	Schottky Diode (Isolated)
Power Dissipation (Max):	520mW (Ta), 8.3W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-HUSON (2x2)
Package / Case:	6-UDFN Exposed Pad

NXP USA Inc. PMFPB6532UP,115