NXP USA Inc.-PMF3800SN,115 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	3.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	0.85 nC @ 10 V
Vgs (Max):	±15V
Input Capacitance (Ciss) (Max) @ Vds:	40 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	560mW (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SC-70
Package / Case:	SC-70, SOT-323

NXP USA Inc. PMF3800SN,115