PMEG2010BEV,115
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NXP USA Inc. PMEG2010BEV,115

Manufacturer No:
PMEG2010BEV,115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Datasheet:
PMEG2010BEV,115 Datasheet
ECAD Model:
-
Description:
NOW NEXPERIA PMEG2010BEV - RECTI
Delivery:
Payment:
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Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1A (DC)
Voltage - Forward (Vf) (Max) @ If:500 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 µA @ 20 V
Capacitance @ Vr, F:80pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-666
Operating Temperature - Junction:150°C (Max)
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Similar Products

Part Number PMEG2010BEV,115 PMEG2010EV,115   PMEG3010BEV,115   PMEG2010BEA,115   PMEG2010BER,115  
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP Semiconductors Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 20 V 30 V 20 V 20 V
Current - Average Rectified (Io) 1A (DC) 1A (DC) 1A (DC) 1A (DC) 1A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 1 A 500 mV @ 1 A 560 mV @ 1 A 500 mV @ 1 A 450 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 200 µA @ 20 V 50 µA @ 15 V 150 µA @ 30 V 200 µA @ 20 V 50 µA @ 20 V
Capacitance @ Vr, F 80pF @ 1V, 1MHz 25pF @ 5V, 1MHz 70pF @ 1V, 1MHz 80pF @ 1V, 1MHz 185pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SC-76, SOD-323 SOD-123W
Supplier Device Package SOT-666 SOT-666 SOT-666 SOD-323 SOD-123W
Operating Temperature - Junction 150°C (Max) 125°C (Max) 150°C (Max) -65°C ~ 150°C 150°C (Max)

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