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Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Arrays
PMDPB95XNE,115
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NXP USA Inc. PMDPB95XNE,115
Manufacturer No:
PMDPB95XNE,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMDPB95XNE,115 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 30V 2.4A HUSON6
Delivery:
Payment:
Product Attributes
FET Type:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
2.4A
Rds On (Max) @ Id, Vgs:
120mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
143pF @ 15V
Power - Max:
475mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
6-UDFN Exposed Pad
Supplier Device Package:
6-HUSON (2x2)
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UnitPrice:
$0.06
Quantity:
9,014
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