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PMDPB38UNE,115
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NXP USA Inc. PMDPB38UNE,115

Manufacturer No:
PMDPB38UNE,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMDPB38UNE,115 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 20V 4A HUSON6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:4A
Rds On (Max) @ Id, Vgs:46mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:268pF @ 10V
Power - Max:510mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UDFN Exposed Pad
Supplier Device Package:6-HUSON (2x2)
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$0.08
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