NXP USA Inc.-PMDPB28UN,115 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	4.6A
Rds On (Max) @ Id, Vgs:	37mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	4.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	265pF @ 10V
Power - Max:	510mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	6-HUSON (2x2)

NXP USA Inc. PMDPB28UN,115