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| Part Number | PMCM650VNE | PMCM650VNEZ |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Product Status | Active | Obsolete |
| FET Type | - | N-Channel |
| Technology | - | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | - | 12 V |
| Current - Continuous Drain (Id) @ 25°C | - | 6.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - | 4.5V |
| Rds On (Max) @ Id, Vgs | - | 25mOhm @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | - | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | - | 15.4 nC @ 4.5 V |
| Vgs (Max) | - | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | - | 1060 pF @ 6 V |
| FET Feature | - | - |
| Power Dissipation (Max) | - | 556mW (Ta), 12.5W (Tc) |
| Operating Temperature | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | Surface Mount |
| Supplier Device Package | - | 6-WLCSP (1.48x0.98) |
| Package / Case | - | 6-XFBGA, WLCSP |
