NXP USA Inc.-PMBTA44/HV215 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	300 mA
Voltage - Collector Emitter Breakdown (Max):	400 V
Vce Saturation (Max) @ Ib, Ic:	750mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 10mA, 10V
Power - Max:	250 mW
Frequency - Transition:	20MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23 (TO-236AB)

NXP USA Inc. PMBTA44/HV215