PHT6N06LT,135
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NXP USA Inc. PHT6N06LT,135

Manufacturer No:
PHT6N06LT,135
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PHT6N06LT,135 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 2.5A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:150mOhm @ 5A, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:4.5 nC @ 5 V
Vgs (Max):±13V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta), 8.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-73
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number PHT6N06LT,135 PHT6N06T,135   PHT8N06LT,135  
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) 5.5A (Tc) 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 10V 5V
Rds On (Max) @ Id, Vgs 150mOhm @ 5A, 5V 150mOhm @ 5A, 10V 80mOhm @ 5A, 5V
Vgs(th) (Max) @ Id 2V @ 1mA 4V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 5 V 5.6 nC @ 10 V 11.2 nC @ 5 V
Vgs (Max) ±13V ±20V ±13V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V 175 pF @ 25 V 650 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.8W (Ta), 8.3W (Tc) 8.3W (Tc) 1.8W (Ta), 8.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-73 SC-73 SC-73
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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