NXP USA Inc.-PHT11N06LT,135 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	55 V
Current - Continuous Drain (Id) @ 25°C:	4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	5V
Rds On (Max) @ Id, Vgs:	40mOhm @ 5A, 5V
Vgs(th) (Max) @ Id:	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	17 nC @ 5 V
Vgs (Max):	±13V
Input Capacitance (Ciss) (Max) @ Vds:	1400 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	1.8W (Ta), 8.3W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SC-73
Package / Case:	TO-261-4, TO-261AA

NXP USA Inc. PHT11N06LT,135