PHM12NQ20T,518
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NXP USA Inc. PHM12NQ20T,518

Manufacturer No:
PHM12NQ20T,518
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PHM12NQ20T,518 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 14.4A 8HVSON
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:14.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1230 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HVSON (5x6)
Package / Case:8-VDFN Exposed Pad
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Similar Products

Part Number PHM12NQ20T,518 PHM15NQ20T,518  
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 14.4A (Tc) 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 12A, 10V 85mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1230 pF @ 25 V 2170 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 62.5W (Tc) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-HVSON (5x6) 8-HVSON (5x6)
Package / Case 8-VDFN Exposed Pad 8-VDFN Exposed Pad

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