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PHE13009/DG,127
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NXP USA Inc. PHE13009/DG,127

Manufacturer No:
PHE13009/DG,127
Manufacturer:
NXP USA Inc.
Package:
Bulk
Datasheet:
PHE13009/DG,127 Datasheet
ECAD Model:
-
Description:
NOW WEEN - PHE13009 - POWER BIPO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):12 A
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:2V @ 1.6A, 8A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:8 @ 5A, 5V
Power - Max:80 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
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In Stock

$0.32
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